By B. Jayant Baliga
"Advanced strength MOSFET innovations" presents an in-depth remedy of the physics of operation of complicated strength MOSFETs. Analytical types for explaining the operation of all of the complex strength MOSFETs are built and defined. the result of numerical simulations are supplied to offer extra perception into the equipment physics and validate the analytical versions. the result of two-dimensional simulations also are given, on the way to corroborate the analytical versions and provides additional perception into the equipment operation. This quantity additionally: -Discusses units which could have an important effect on bettering the potency of the voltage-regulator-modules used to convey strength to microprocessors and pix chips in laptops and servers -Covers functions in all decrease voltage circuits, particularly the car electronics region contains numerical simulation examples to provide an explanation for the working physics and validate the versions - bargains wide assurance of the position of silicon carbide within the layout and constitution of strength rectifiers "Advanced energy MOSFET recommendations" is a must-read for researchers and training engineers within the energy equipment industry.
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Additional resources for Advanced Power MOSFET Concepts
These devices found applications in power electronic circuits that operated at low (<100 V) voltages. The fast switching speed and ruggedness of the D-MOSFET structure were significant advantages compared with the performance of the available bipolar power transistor. The physics of operation of the power D-MOSFET structure has been analyzed in detail in the textbook . In this chapter of the monograph, a brief description of the device operation is provided for completeness and for contrasting it to the advanced device structures that are discussed in later chapters.
6. J. Baliga, et al, “Gallium Arsenide Schottky Power Rectifiers”, IEEE Transactions on Electron Devices, Vol. ED-32, pp. 1130–1134, 1985. 7. M. M. J. Baliga, “Silicon Carbide High Voltage (400 V) Schottky Barrier Diodes”, IEEE Electron Device Letters, Vol. EDL-13, pp. 501–503, 1992. 8. W. Fulop, “Calculation of Avalanche Breakdown in Silicon P-N Junctions”, Solid State Electronics, Vol. 10, pp. 39–43, 1967. 9. R. Van Overstraeten and H. DeMan, “Measurements of the Ionization Rates in Diffused Silicon P-N Junctions”, Solid State Electronics, Vol.
A change in the slope of the electric field profile can be observed close to the semiconductor surface due to the enhanced doping concentration arising from the JFET doping. The electric field in the oxide increases rapidly with increasing drain bias because the gate oxide is not shielded from the drain potential. The high electric field in the gate oxide in the blocking mode has been found to create reliability problems. The electric field in the gate oxide for the power D-MOSFET structure is just below the limit for reliable operation allowing stable device performance over long periods of time.